A theoritical approach to study the thermal impact of the DC and RF characteristics of a MgZnO/ZnO HEMT

Abstract

In this work, a new current model of the MgZnO/ZnO high electron mobility transistors (HEMTs) has been developed considering the exact velocity-field characteristics of electrons in ZnO. The drain current of the device has been studied with reference to different applied potentials. The other device parameters, such as drain conductance, mutual conductance, cut-off frequency, and maximum operating frequency, are also calculated and their variations with different device parameters are studied. In addition, the variation of drain current with respect to ambient temperature and mole fraction of MgZnO have been studied and the results are reported. It has been noticed from our study that device characteristics depend significantly on the shift of temperature as well as the mole fraction of MgZnO. Finally, the theoretical results are compared with the experimental data reported earlier to crosscheck the validity of this model.